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Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
Technical Data
ATF-34143
Features
* Low Noise Figure * Excellent Uniformity in Product Specifications * Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-70) * Tape-and-Reel Packaging Option Available
Surface Mount Package SOT-343
Description
Agilent's ATF-34143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Based on its featured performance, ATF-34143 is suitable for applications in cellular and PCS base stations, LEO systems, MMDS, and other systems requiring super low noise figure with good intercept in the 450 MHz to 10 GHz frequency range.
Pin Connections and Package Marking
Specifications
* 0.5 dB Noise Figure * 17.5 dB Associated Gain * 20 dBm Output Power at 1 dB Gain Compression * 31.5 dBm Output 3rd Order Intercept
SOURCE
4Px
1.9 GHz; 4 V, 60 mA (Typ.)
DRAIN
SOURCE
GATE
Note: Top View. Package marking provides orientation and identification. "4P" = Device code "x" = Date code character. A new character is assigned for each month, year.
Applications
* Low Noise Amplifier for Cellular/PCS Base Stations * LNA for WLAN, WLL/RLL, LEO, and MMDS Applications * General Purpose Discrete PHEMT for Other Ultra Low Noise Applications
ATF-34143 Absolute Maximum Ratings[1]
Symbol VDS VGS VGD ID Pdiss Pin max TCH TSTG jc Parameter Drain - Source Voltage[2] Gate - Source Voltage[2] Gate Drain Voltage[2] Drain Current[2] Total Power Dissipation [4] RF Input Power Channel Temperature Storage Temperature Thermal Resistance [5] Units V V V mA mW dBm C C C/W Absolute Maximum 5.5 -5 -5 Idss [3] 725 17 160 -65 to 160 165
Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. VGS = 0 volts. 4. Source lead temperature is 25C. Derate 6 mW/ C for TL > 40C. 5. Thermal resistance measured using 150C Liquid Crystal Measurement method. 6. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss. These conditions are acceptable as long as the maximum Pdiss and Pin max ratings are not exceeded.
Product Consistency Distribution Charts [7]
250
+0.6 V
120 100 80
200
Cpk = 1.37245 Std = 0.66 9 Wafers Sample Size = 450
IDS (mA)
150
0V
-3 Std
60
+3 Std
100 40 50
-0.6 V
20 0 29
0 0 2 4 VDS (V) 6 8
30
31
32
33
34
35
OIP3 (dBm)
Figure 1. Typical/Pulsed I-V Curves [6]. (VGS = -0.2 V per step)
Figure 2. OIP3 @ 2 GHz, 4 V, 60 mA. LSL=29.0, Nominal=31.8, USL=35.0
120 100 80
Cpk = 2.69167 Std = 0.04 9 Wafers Sample Size = 450
120 100 80
Cpk = 2.99973 Std = 0.15 9 Wafers Sample Size = 450
-3 Std
60 40 20 0 0 0.2 0.4 NF (dB)
+3 Std
60 40 20 0 16
-3 Std
+3 Std
0.6
0.8
16.5
17
17.5
18
18.5
19
GAIN (dB)
Figure 3. NF @ 2 GHz, 4 V, 60 mA. LSL=0.1, Nominal=0.47, USL=0.8
Figure 4. Gain @ 2 GHz, 4 V, 60 mA. LSL=16.0, Nominal=17.5, USL=19.0
Notes: 7. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits.
8. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test requirements.
Circuit losses have been de-embedded from actual measurements.
ATF-34143 Electrical Specifications
TA = 25C, RF parameters measured in a test circuit for a typical device Symbol Idss [1] VP [1] Id gm[1] IGDO Igss NF Parameters and Test Conditions Saturated Drain Current VDS = 1.5 V, VGS = 0 V Pinchoff Voltage VDS = 1.5 V, IDS = 10% of Idss Quiescent Bias Current VGS = 0.34 V, VDS = 4 V Transconductance VDS = 1.5 V, gm = Idss /VP Gate to Drain Leakage Current VGD = 5 V Gate Leakage Current VGD = VGS = -4 V Noise Figure f = 2 GHz VDS = 4 V, IDS = 60 mA VDS = 4 V, IDS = 30 mA f = 900 MHz VDS = 4 V, IDS = 60 mA Associated Gain f = 2 GHz VDS = 4 V, IDS = 60 mA VDS = 4 V, IDS = 30 mA f = 900 MHz VDS = 4 V, IDS = 60 mA rd Order Output 3 f = 2 GHz VDS = 4 V, IDS = 60 mA Intercept Point [3] +5 dBm Pout /Tone VDS = 4 V, IDS = 30 mA f = 900 MHz VDS = 4 V, IDS = 60 mA +5 dBm Pout /Tone 1 dB Compressed f = 2 GHz VDS = 4 V, IDS = 60 mA Intercept Point [3] VDS = 4 V, IDS = 30 mA f = 900 MHz VDS = 4 V, IDS = 60 mA Units mA V mA mmho A A dB dB dB dB dBm dBm dBm dBm Min. Typ.[2] 90 118 -0.65 -0.5 -- 60 180 230 -- 30 0.5 0.5 0.4 17.5 17 21.5 31.5 30 31 20 19 18.5 Max. 145 -0.35 -- -- 500 300 0.8
Ga
16
19
OIP3
29
P1dB
Notes: 1. Guaranteed at wafer probe level 2. Typical value determined from a sample size of 450 parts from 9 wafers. 3. Using production test board.
Input
50 Ohm Transmission Line Including Gate Bias T (0.5 dB loss)
Input Matching Circuit _mag = 0.30 _ang = 56 (0.4 dB loss)
DUT
50 Ohm Transmission Line Including Drain Bias T (0.5 dB loss)
Output
Figure 5. Block diagram of 2 GHz producution test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.
ATF-34143 Typical Performance Curves
35
OIP3
20
1
30
ASSOCIATED GAIN (dB)
OIP3, P 1dB (dBm)
25 20 15 10 5 0 0 20 40 60 80 100 120 140 IDSQ (mA)
P1dB 3V 4V
15
NOISE FIGURE (dB)
0.8
0.6
10
0.4
5
3V 4V
0.2
3V 4V
0 0 20 40 60 80 100 120 CURRENT (mA)
0 0 20 40 60 80 100 120 CURRENT (mA)
Figure 6. OIP3 and P1dB vs. IDS and VDS Tuned for NF @ 4V, 60 mA at 2GHz. [1,2]
35
OIP3
Figure 7. Associated Gain vs. Current (Id) and Voltage (V D) at 2 GHz. [1,2]
Figure 8. Noise Figure vs. Current (Id) and Voltage (V DS) at 2 GHz. [1,2]
25
0.7 0.6
ASSOCIATED GAIN (dB)
30
25 20 15
P1dB
NOISE FIGURE (dB)
3V 4V
20
OIP3, P 1dB (dBm)
0.5 0.4 0.3 0.2 0.1 0
3V 4V
15
10
10 5 0 0 20 40 60 IDSQ (mA) 80 100 120
3V 4V
5
0 0 20 40 60 80 100 120 CURRENT (mA)
0
20
40
60
80
100
120
CURRENT (mA)
Figure 9. OIP3 and P1dB vs. IDS and VDS Tuned for NF @ 4 V, 60 mA at 900MHz. [1,2]
1.2 1.0
Figure 10. Associated Gain vs. Current (Id) and Voltage (V D) at 900 MHz. [1,2]
Figure 11. Noise Figure vs. Current (Id) and Voltage (V DS) at 900 MHz. [1,2]
25
20
Fmin (dB)
0.8 0.6 0.4 0.2 0 0 2.0 4.0 6.0 FREQUENCY (GHz)
60 mA 40 mA 20 mA
Ga (dB)
15
10
60 mA 40 mA 20 mA
5
0
1.0
2.0
3.0
4.0
5.0
6.0
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and Current at 4 V.
Figure 13. Associated Gain vs. Frequency and Current at 4 V.
Notes: 1. Measurements made on a fixed toned production test board that was tuned for optimal gain match with reasonable noise figure at 4 V, 60 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on production test board requirements. Circuit losses have been de-embedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm is approached.
ATF-34143 Typical Performance Curves, continued
25
85 C 25 C -40 C
1.5
33
GAIN (dB), OP1dB, and OIP3 (dBm)
35 30 25 20 15 10 5 0 0 2000 4000 6000 8000 0 20 40 60 80 100 120 140 FREQUENCY (MHz) IDSQ (mA)
5.0 4.5
NOISE FIGURE (dB)
Gain OP1dB OIP3 NF
31
P1dB, OIP3 (dBm)
29 27 25 23 21 19
P1dB OIP3 85 C 25 C -40 C
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
20
Ga (dB)
1.0
NF (dB)
15
0.5
10 0 2000 4000 6000 FREQUENCY (GHz)
0 8000
17
Figure 14. Fmin and Ga vs. Frequency and Temperature at V DS = 4 V, IDS = 60 mA.
Figure 15. P1dB, IP3 vs. Frequency and Temperature at V DS = 4 V, IDS = 60 mA. [1]
Figure 16. NF, Gain, OP1dB and OIP3 vs. IDS at 4 V and 3.9 GHz Tuned for Noise Figure. [1]
25 20 15 10 5
30
GAIN (dB), OP1dB, and OIP3 (dBm)
5.0 4.5
NOISE FIGURE (dB)
25 20 15 10 5 0 -5 0 50 IDS (mA) 100 150
3V 4V
27 24 21 18 15 12 9 6 3 0 0 20 40 60 IDSQ (mA) 80 100
Gain OP1dB OIP3 NF
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 120
P1dB (dBm)
P1dB (dBm)
0 -5 0 50 IDS (mA) 100
3V 4V
150
Figure 17. NF, Gain, OP1dB and OIP3 vs. IDS at 4 V and 5.8 GHz Tuned for Noise Figure. [1]
Figure 18. P1dB vs. IDS Active Bias Tuned for NF @ 4 V, 60 mA at 2 GHz.
Figure 19. P1dB vs. IDS Active Bias Tuned for min NF @ 4 V, 60 mA at 900MHz.
Note: 1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm is approached.
ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 120 mA
Freq (GHz) 0.9 1.5 1.8 2 4 6 P1dB (dBm) 20.9 21.7 21.3 22.0 22.7 23.3 Id (mA) 114 115 111 106 110 115 G1dB (dB) 25.7 21.9 20.5 19.5 12.7 9.2 PAE1dB (%) 27 32 30 37 40 41 P3dBm (dBm) 22.8 23.1 23.0 23.7 23.6 24.2 Id (mA) 108 95 105 115 111 121 PAE3dB (%) 44 53 47 50 47 44 Gamma Out_mag (Mag) 0.34 0.31 0.30 0.28 0.26 0.24 Gamma Out_ang (Degrees) 136 152 164 171 -135 -66
ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 60 mA
Freq (GHz) 0.9 1.5 1.8 2 4 6
80 50 60
P1dB (dBm) 18.2 18.7 18.8 18.8 20.2 21.2
Id (mA) 75 58 57 59 66 79
G1dB (dB) 27.5 24.5 23.0 22.2 13.9 9.9
PAE1dB (%) 22 32 33 32 38 37
80
P3dBm (dBm) 20.5 20.8 21.1 21.9 22.0 23.5
Id (mA) 78 59 71 81 77 102
PAE3dB (%) 36 51 45 47 48 46
Gamma Out_mag (Mag) 0.48 0.45 0.42 0.40 0.25 0.18
Gamma Out_ang (Degrees) 102 117 126 131 -162 -77
Pout (dBm), G (dB), PAE (%)
40 30 20 10 0 -10 -30
Pout Gain PAE
Pout (dBm), G (dB), PAE (%)
40
20
0
Pout Gain PAE
-20
-10
0
10
20
-20 -30
-20
-10
0
10
20
Pin (dBm)
Pin (dBm)
Figure 20. Swept Power Tuned for Power at 2 GHz, VDS = 4 V, I DSQ = 120 mA.
Figure 21. Swept Power Tuned for Power at 2 GHz, VDS = 4 V, I DSQ = 60 mA.
Notes: 1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm is approached. 2. PAE(%) = ((Pout - Pin) / Pdc) x 100 3. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
ATF-34143 Typical Scattering Parameters, VDS = 3 V, IDS = 20 mA
Freq. GHz 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Mag. 0.96 0.91 0.87 0.81 0.78 0.75 0.72 0.69 0.65 0.64 0.65 0.66 0.69 0.72 0.75 0.77 0.80 0.83 0.85 0.86 0.85 0.85 0.88 S11 Ang. -37 -60 -76 -104 -115 -126 -145 -162 166 139 114 89 67 48 30 10 -10 -29 -44 -55 -72 -88 -101 dB 20.07 19.68 18.96 17.43 16.70 16.00 14.71 13.56 11.61 10.01 8.65 7.33 6.09 4.90 3.91 2.88 1.74 0.38 -0.96 -2.06 -3.09 -4.22 -5.71 S21 Mag. 10.079 9.642 8.867 7.443 6.843 6.306 5.438 4.762 3.806 3.165 2.706 2.326 2.017 1.758 1.568 1.393 1.222 1.045 0.895 0.789 0.701 0.615 0.518 Ang. 153 137 126 106 98 90 75 62 38 16 -5 -27 -47 -66 -86 -105 -126 -145 -161 -177 166 149 133 dB -29.12 -26.02 -24.29 -22.27 -21.62 -21.11 -20.45 -19.83 -19.09 -18.49 -18.06 -17.79 -17.52 -17.39 -17.08 -16.95 -16.95 -17.39 -17.86 -18.13 -18.13 -18.06 -18.94 S12 Mag. 0.035 0.050 0.061 0.077 0.083 0.088 0.095 0.102 0.111 0.119 0.125 0.129 0.133 0.135 0.140 0.142 0.142 0.135 0.128 0.124 0.124 0.125 0.113 S22 Ang. 68 56 48 34 28 23 15 7 -8 -21 -35 -49 -62 -75 -88 -103 -118 -133 -145 -156 -168 177 165 Mag. 0.40 0.34 0.32 0.29 0.28 0.26 0.25 0.23 0.22 0.22 0.23 0.25 0.29 0.34 0.39 0.43 0.47 0.53 0.58 0.62 0.65 0.68 0.71 Ang. -35 -56 -71 -98 -110 -120 -140 -156 174 146 118 91 67 46 28 10 -10 -28 -42 -57 -70 -85 -103 MSG/MAG dB 24.59 22.85 21.62 19.85 19.16 18.55 17.58 16.69 15.35 14.25 13.35 10.91 9.71 8.79 8.31 7.56 6.83 6.18 5.62 5.04 3.86 3.00 2.52
ATF-34143 Typical Noise Parameters
VDS = 3 V, IDS = 20 mA Freq. Fmin opt GHz dB Mag. 0.5 0.10 0.90 0.9 0.11 0.85 1.0 0.11 0.84 1.5 0.14 0.77 1.8 0.17 0.74 2.0 0.19 0.71 2.5 0.23 0.65 3.0 0.29 0.59 4.0 0.42 0.51 5.0 0.54 0.45 6.0 0.67 0.42 7.0 0.79 0.42 8.0 0.92 0.45 9.0 1.04 0.51 10.0 1.16 0.61 Ang. 13 27 31 48 57 66 83 102 138 174 -151 -118 -88 -63 -43 Rn/50 0.16 0.14 0.13 0.11 0.10 0.09 0.07 0.06 0.03 0.03 0.05 0.10 0.18 0.30 0.46 Ga dB 21.8 18.3 17.8 16.4 16.0 15.6 14.8 14.0 12.6 11.4 10.3 9.4 8.6 8.0 7.5
25 20
MSG
MSG/MAG and S21 (dB)
15 10 5 0 -5
MAG
S21
-10 0
2
4
6
8
10 12 14
16 18
FREQUENCY (GHz)
Figure 23. MSG/MAG and |S21|2 vs. Frequency at 3 V, 20 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-34143 Typical Scattering Parameters, VDS = 3 V, IDS = 40 mA
Freq. GHz 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Mag. 0.96 0.89 0.85 0.79 0.76 0.74 0.70 0.67 0.64 0.64 0.65 0.66 0.69 0.73 0.76 0.78 0.80 0.83 0.86 0.87 0.86 0.86 0.88 S11 Ang. -40 -64 -81 -109 -121 -131 -150 -167 162 135 111 87 65 46 28 9 -11 -30 -44 -56 -72 -88 -102 dB 21.32 20.79 19.96 18.29 17.50 16.75 15.39 14.19 12.18 10.54 9.15 7.80 6.55 5.33 4.33 3.30 2.15 0.79 -0.53 -1.61 -2.60 -3.72 -5.15 S21 Mag. 11.645 10.950 9.956 8.209 7.495 6.876 5.880 5.120 4.063 3.365 2.867 2.454 2.125 1.848 1.647 1.462 1.281 1.095 0.941 0.831 0.741 0.652 0.553 Ang. 151 135 124 104 96 88 74 61 38 16 -5 -26 -46 -65 -84 -104 -123 -142 -158 -174 169 153 137 dB -30.46 -27.33 -25.68 -23.61 -22.97 -22.38 -21.51 -20.92 -19.83 -19.02 -18.34 -17.86 -17.46 -17.20 -16.83 -16.65 -16.65 -17.08 -17.52 -17.72 -17.72 -17.79 -18.64 S12 Mag. 0.030 0.043 0.052 0.066 0.071 0.076 0.084 0.090 0.102 0.112 0.121 0.128 0.134 0.138 0.144 0.147 0.147 0.140 0.133 0.130 0.130 0.129 0.117 S22 Ang. 68 56 49 36 32 27 19 12 -1 -14 -28 -42 -55 -69 -84 -99 -114 -130 -142 -154 -166 179 166 Mag. 0.29 0.24 0.24 0.23 0.23 0.22 0.22 0.22 0.21 0.22 0.24 0.28 0.32 0.37 0.41 0.45 0.50 0.55 0.60 0.64 0.66 0.69 0.72 Ang. -43 -70 -88 -118 -130 -141 -160 -176 157 131 105 81 60 40 23 5 -14 -31 -45 -59 -73 -88 -105 MSG/MAG dB 25.89 24.06 22.82 20.95 20.24 19.57 18.45 17.55 16.00 14.78 12.91 11.03 9.93 9.07 8.59 7.84 7.15 6.50 5.96 5.39 4.21 3.43 2.95
ATF-34143 Typical Noise Parameters
VDS = 3 V, IDS = 40 mA Freq. Fmin opt GHz dB Mag. 0.5 0.10 0.87 0.9 0.13 0.82 1.0 0.14 0.80 1.5 0.17 0.73 1.8 0.21 0.70 2.0 0.23 0.66 2.5 0.29 0.60 3.0 0.35 0.54 4.0 0.47 0.46 5.0 0.6 0.41 6.0 0.72 0.39 7.0 0.85 0.41 8.0 0.97 0.45 9.0 1.09 0.52 10.0 1.22 0.61 Ang. 13 28 32 50 61 68 87 106 144 -178 -142 -109 -80 -56 -39 Rn/50 0.16 0.13 0.13 0.1 0.09 0.08 0.06 0.05 0.03 0.03 0.06 0.12 0.21 0.34 0.50 Ga dB 23.0 19.6 19.2 17.7 17.1 16.7 15.8 14.9 13.4 12.1 10.9 9.9 9.1 8.4 8.0
30 25 20
MSG
MSG/MAG and S21 (dB)
15 10 5 0 -5
S21 MAG
-10 0
2
4
6
8
10 12 14
16 18
FREQUENCY (GHz)
Figure 24. MSG/MAG and |S21|2 vs. Frequency at 3 V, 40 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-34143 Typical Scattering Parameters, VDS = 4 V, IDS = 40 mA
Freq. GHz 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Mag. 0.95 0.89 0.85 0.78 0.73 0.70 0.67 0.64 0.63 0.64 0.66 0.69 0.72 0.76 0.78 0.80 0.84 0.86 0.87 0.86 0.86 0.89 0.89 S11 Ang. -40 -65 -82 -109 -131 -150 -167 162 135 111 87 65 47 28 9 -11 -29 -44 -56 -72 -88 -102 -101.85 dB 21.56 21.02 20.19 18.49 16.93 15.57 14.36 12.34 10.70 9.32 7.98 6.74 5.55 4.55 3.53 2.39 1.02 -0.30 -1.38 -2.40 -3.53 -4.99 -4.99 S21 Mag. 11.973 11.252 10.217 8.405 7.024 6.002 5.223 4.141 3.428 2.923 2.506 2.173 1.894 1.689 1.501 1.317 1.125 0.966 0.853 0.759 0.666 0.563 0.563 Ang. 151 135 123 104 87 73 61 37 16 -6 -26 -46 -65 -85 -104 -124 -143 -160 -176 167 151 134 134 dB 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.12 0.13 0.13 0.14 0.15 0.15 0.14 0.13 0.13 0.13 0.13 0.12 0.12 S12 Mag. 0.030 0.042 0.051 0.064 0.074 0.081 0.087 0.098 0.108 0.117 0.124 0.130 0.134 0.141 0.145 0.145 0.140 0.133 0.130 0.131 0.130 0.119 0.119 S22 Ang. 68 56 48 36 27 19 12 -1 -13 -27 -41 -54 -68 -82 -97 -113 -128 -141 -152 -165 -180 168 168 Mag. 0.33 0.27 0.26 0.24 0.22 0.21 0.20 0.19 0.20 0.21 0.24 0.29 0.34 0.38 0.42 0.47 0.53 0.58 0.62 0.65 0.68 0.71 0.71 Ang. -39 -63 -80 -109 -131 -150 -167 165 138 111 86 63 42 26 8 -11 -29 -43 -58 -71 -86 -103 -103 MSG/MAG dB 26.01 24.28 23.02 21.18 20.46 19.77 18.70 17.75 16.26 15.02 12.93 11.14 10.09 9.24 8.79 8.09 7.35 6.76 6.19 5.62 4.43 3.60 3.15
ATF-34143 Typical Noise Parameters
VDS = 4 V, IDS = 40 mA Freq. Fmin opt GHz dB Mag. 0.5 0.10 0.87 0.9 0.13 0.82 1.0 0.14 0.80 1.5 0.17 0.73 1.8 0.20 0.70 2.0 0.22 0.66 2.5 0.28 0.60 3.0 0.34 0.54 4.0 0.45 0.45 5.0 0.57 0.40 6.0 0.69 0.38 7.0 0.81 0.39 8.0 0.94 0.43 9.0 1.06 0.51 10.0 1.19 0.62 Ang. 13 27 31 49 60 67 85 104 142 180 -144 -111 -82 -57 -40 Rn/50 0.16 0.14 0.13 0.11 0.10 0.09 0.07 0.05 0.03 0.03 0.05 0.11 0.20 0.32 0.47 Ga dB 22.8 19.4 18.9 17.4 16.9 16.4 15.6 14.8 13.3 12.0 10.9 9.9 9.1 8.5 8.1
30 25
MSG/MAG and S21 (dB)
20 15 10
MSG
S21
MAG
5 0 -5 0
2
4
6
8
10 12 14
16 18
FREQUENCY (GHz)
Figure 25. MSG/MAG and |S21|2 vs. Frequency at 4 V, 40 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-34143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq. GHz 0.5 0.8 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Mag. 0.95 0.89 0.85 0.78 0.75 0.73 0.69 0.67 0.64 0.63 0.64 0.66 0.69 0.73 0.76 0.78 0.81 0.84 0.86 0.87 0.86 0.86 0.89 S11 Ang. -41 -65 -83 -111 -122 -133 -151 -168 161 134 111 86 65 46 28 9 -11 -30 -44 -56 -72 -88 -101.99 dB 21.91 21.33 20.46 18.74 17.92 17.16 15.78 14.56 12.53 10.88 9.49 8.15 6.92 5.72 4.73 3.70 2.57 1.20 -0.12 -1.21 -2.21 -3.35 -4.81 S21 Mag. 12.454 11.654 10.549 8.646 7.873 7.207 6.149 5.345 4.232 3.501 2.983 2.557 2.217 1.932 1.723 1.531 1.344 1.148 0.986 0.870 0.775 0.680 0.575 Ang. 150 134 123 103 95 87 73 60 37 16 -5 -26 -46 -65 -84 -104 -124 -143 -159 -175 168 151 135 dB -31.06 -28.18 -26.56 -24.44 -23.74 -23.22 -22.38 -21.62 -20.54 -19.58 -18.79 -18.27 -17.79 -17.46 -16.95 -16.71 -16.71 -17.02 -17.46 -17.59 -17.59 -17.65 -18.42 S12 Mag. 0.028 0.039 0.047 0.060 0.065 0.069 0.076 0.083 0.094 0.105 0.115 0.122 0.129 0.134 0.142 0.146 0.146 0.141 0.134 0.132 0.132 0.131 0.120 S22 Ang. 68 57 49 38 33 29 22 15 3 -10 -24 -38 -51 -65 -79 -94 -111 -126 -139 -150 -163 -178 169 Mag. 0.29 0.24 0.23 0.21 0.21 0.20 0.19 0.19 0.18 0.19 0.21 0.24 0.28 0.33 0.38 0.42 0.47 0.52 0.58 0.62 0.65 0.68 0.71 Ang. -41 -67 -84 -114 -125 -136 -155 -171 162 135 109 84 62 42 25 7 -12 -29 -43 -58 -71 -86 -104 MSG/MAG dB 26.48 24.75 23.51 21.59 20.83 20.19 19.08 18.09 16.53 15.23 12.89 11.22 10.21 9.36 8.94 8.23 7.56 6.94 6.37 5.78 4.60 3.79 3.33
ATF-34143 Typical Noise Parameters
VDS = 4 V, IDS = 60 mA Freq. Fmin opt GHz dB Mag. 0.5 0.11 0.84 0.9 0.14 0.78 1.0 0.15 0.77 1.5 0.20 0.69 1.8 0.23 0.66 2.0 0.26 0.62 2.5 0.33 0.55 3.0 0.39 0.50 4.0 0.53 0.43 5.0 0.67 0.39 6.0 0.81 0.39 7.0 0.96 0.42 8.0 1.10 0.47 9.0 1.25 0.54 10.0 1.39 0.62 Ang. 15 30 34 53 62 72 91 111 149 -173 -137 -104 -76 -53 -37 Rn/50 0.14 0.12 0.12 0.10 0.10 0.09 0.07 0.05 0.03 0.04 0.07 0.14 0.26 0.41 0.60 Ga dB 24.5 20.7 20.2 18.5 17.7 17.2 16.3 15.4 13.7 12.3 11.1 10.0 9.2 8.6 8.2
30 25 20 MSG/MAG and S21 (dB) 15 10 5 0 -5 -10 0 2 4 6 8 10 12 14 16 18
S21 MAG MSG
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S21|2 vs. Frequency at 4 V, 60 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Noise Parameter Applications Information
Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true Fmin is calculated. Fmin represents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50, to an impedance represented by the reflection coefficient o. The designer must design a matching network that will present o to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to Fmin only when the device is
presented with o. If the reflection coefficient of the matching network is other than o, then the noise figure of the device will be greater than Fmin based on the following equation. NF = Fmin + 4 Rn |s - o | 2 Zo (|1 + o| 2) (1 - s| 2) Where Rn /Zo is the normalized noise resistance, o is the optimum reflection coefficient required to produce Fmin and s is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. o is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower o as compared to narrower gate width devices.
Typically for FETs, the higher o usually infers that an impedance much higher than 50 is required for the device to produce Fmin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at 900 MHz, when airwwound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using muiltilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Fmin of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on amplifier noise figure is covered in Agilent Application 1085.
ATF-34143 SC-70 4 Lead, High Frequency Nonlinear Model
Optimized for 0.1 - 6.0 GHz
EQUATION La=0.1 nH EQUATION Lb=0.1 nH EQUATION Lc=0.8 nH EQUATION Ld=0.6 nH EQUATION Rb=0.1 OH EQUATION Ca=0.15 pF EQUATION Cb=0.15 pF L GATE_IN L=Lc LOSSYL L=Lb R=Rb C C=Ca G L SOURCE L=La S LOSSYL L=Lb R=Rb LOSSYL L=Lb R=Rb L=Ld L DRAIN_OUT R R=0.1 OH LOSSYL L=Lb R=Rb LOSSYL L=Lb R=Rb C=Cb L SOURCE L=La *.5 C D
This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to
the measured data in this data sheet. For future improvements Agilent reserves the right to change these models without prior notice.
ATF-34143 Die Model
MESFET MODEL * * STATZMODEL = FET
IDS model
NFET=yes PFET= IDSMOD=3 VTO=-0.95 BETA= Beta LAMBDA=0.09 ALPHA=4.0 B=0.8 TNOM=27 IDSTC= VBI=.7
Gate model
DELTA=.2 GSCAP=3 CGS=cgs pF GDCAP=3 GCD=Cgd pF
Parasitics
RG=1 RD=Rd RS=Rs LG=Lg nH LD=Ld nH LS=Ls nH CDS=Cds pF CRF=.1 RC=Rc
Breakdown
GSFWD=1 GSREV=0 GDFWD=1 GDREV=0 VJR=1 IS=1 nA IR=1 nA IMAX=.1 XTI= N= EG=
Noise
FNC=01e+6 R=.17 P=.65 C=.2
M o d e l s c a l fa c t o r s ( W = F E T w i d t h i n m i c r o n s )
XX
D
E QUAT I O N C d s = 0 . 0 1 * W / 2 0 0 E QUAT I O N B e t a = 0 . 0 6 * W / 2 0 0 E QUAT I O N R d = 2 0 0 / W E QUAT I O N R s = . 5 * 2 0 0 / W E QUAT I O N C g s = 0 . 2 * W / 2 0 0 E QUAT I O N C g d = 0 . 0 4 * W / 2 0 0 E QUAT I O N L g = 0 . 0 3 * 2 0 0 / W E QUAT I O N L d = 0 . 0 3 * 2 0 0 / W E QUAT I O N L s = 0 . 0 1 * 2 0 0 / W E QUAT I O N R c = 5 0 0 * 2 0 0 / W NFETMESFET
XX
G
MODEL=FET
S
XX
S
W=800 m
Part Number Ordering Information
Part Number ATF-34143-TR1 ATF-34143-TR2 ATF-34143-BLK No. of Devices 3000 10000 100 Container 7" Reel 13" Reel antistatic bag
Package Dimensions
Outline 43 (SOT-343/SC-70 4 lead)
1.30 (0.051) BSC 1.30 (.051) REF
2.60 (.102) E E1 1.30 (.051)
0.55 (.021) TYP 1.15 (.045) BSC e D h 1.15 (.045) REF
0.85 (.033)
A
b TYP
A1 L DIMENSIONS
C TYP
SYMBOL A A1 b C D E e h E1 L
MIN. MAX. 0.80 (0.031) 1.00 (0.039) 0 (0) 0.10 (0.004) 0.25 (0.010) 0.35 (0.014) 0.10 (0.004) 0.20 (0.008) 1.90 (0.075) 2.10 (0.083) 2.00 (0.079) 2.20 (0.087) 0.55 (0.022) 0.65 (0.025) 0.450 TYP (0.018) 1.15 (0.045) 1.35 (0.053) 0.10 (0.004) 0.35 (0.014) 0 10
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Device Orientation
REEL TOP VIEW 4 mm END VIEW
CARRIER TAPE USER FEED DIRECTION COVER TAPE
8 mm
4PX
4PX
4PX
4PX
Tape Dimensions
For Outline 4T
P P0 D P2
E
F W C
D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
8 MAX.
K0
5 MAX.
A0
B0
DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION)
SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2
SIZE (mm) 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 1.55 0.05 4.00 0.10 1.75 0.10 8.00 0.30 0.255 0.013 5.4 0.10 0.062 0.001 3.50 0.05 2.00 0.05
SIZE (INCHES) 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 0.061 0.002 0.157 0.004 0.069 0.004 0.315 0.012 0.010 0.0005 0.205 0.004 0.0025 0.00004 0.138 0.002 0.079 0.002
PERFORATION
CARRIER TAPE COVER TAPE DISTANCE

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